With a stressed film, defects such as dislocations, voids, and cracking may occur. The FLX stress measurement system helps troubleshoot applications listed below:
- Aluminum stress-induced voids
 - Passivation cracking (nitride, oxide)
 - Stress-induced dislocations in silicon
 - Electrical test yield degradation
 - Tungsten silicide cracking
 - Stress increase in oxides during temperature cycling
 - Constant current stress test (CCST) degradation
 - Matching metallization expansion on GaAs
 - Silicon cracking due to high film stress
 
        